a-SiC:H/a-Si:H heterojunction solar cell having more than 7.1% conversion efficiency
- 1 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (3) , 237-239
- https://doi.org/10.1063/1.92692
Abstract
A clear valency electron controllability with substitutional impurity doping in the hydrogenated amorphous silicon carbide has been found. The amorphous silicon carbide is produced by the plasma decomposition of [SiH4(1−X)+CH4(X)] with the dopant gas of a B2H6 or PH3 system. Electrical and optical properties of doped amorphous SiC films are briefly demonstrated. Utilizing this a‐SiC:H as a wide‐band‐gap window material, we have developed a new type of a‐SiC:H/a‐Si:H heterojunction solar cell. A typical cell performance is Voc = 0.887 V, Jsc = 12.33 mA/cm2, fill factor = 0.653, and the conversion efficiency of 7.14% under AM‐1 illumination.Keywords
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