A new type of amorphous silicon photovoltaic cell generating more than 2.0 V

15 July 1979

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 35 (2) , 187-189
https://doi.org/10.1063/1.91031

Abstract

A new type of plasma‐deposited amorphous silicon photovoltaic cell having a horizontally multilayered p‐i‐n unit‐cell structure has been developed. The open‐circuit voltage V_oc is nearly proportional to the number of repetitions of the p‐i‐n unit cell. Almost‐constant energy‐conversion efficiencies of around 4% have been obtained with V_oc ranging from 0.6 to 2.4 V by applying a simple optimum design rule to the cell‐construction parameters.

Keywords

This publication has 5 references indexed in Scilit:

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