A critical pulling rate for remelt suppression in silicon crystal growth
- 1 May 1981
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 53 (2) , 441-442
- https://doi.org/10.1016/0022-0248(81)90097-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The effect of doping on the formation of swirl defects in dislocation-free czochralski-grown silicon crystalsJournal of Crystal Growth, 1980
- Analysis of the temperature distribution in FZ silicon crystalsJournal of Crystal Growth, 1979
- The formation of swirl defects in silicon by agglomeration of self-interstitialsJournal of Crystal Growth, 1977
- Effect of growth parameters on formation and elimination of vacancy clusters in dislocation-free silicon crystalsJournal of Crystal Growth, 1974