Organic semiconductor interfaces: Discrimination between charging and band bending related shifts in frontier orbital line-up measurements with photoemission spectroscopy
- 15 November 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (10) , 5678-5686
- https://doi.org/10.1063/1.371578
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Observation of strong band bending in perylene tetracarboxylic dianhydride thin films grown on SnS2Journal of Applied Physics, 1999
- Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity ruleJournal of Applied Physics, 1999
- Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurementsApplied Physics Letters, 1998
- Molecular level alignment at organic semiconductor-metal interfacesApplied Physics Letters, 1998
- Energy level alignment at organic/metal interfaces studied by UV photoemissionSynthetic Metals, 1997
- Energy level alignment at organic/metal interfaces studied by UV photoemission: breakdown of traditional assumption of a common vacuum level at the interfaceIEEE Transactions on Electron Devices, 1997
- Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band DiscontiuitiesPhysical Review Letters, 1979
- Systematic atomic number effects in complexes exhibiting ligand luminescenceSpectrochimica Acta Part A: Molecular Spectroscopy, 1973
- The effect of the electronic structure of the cation upon fluorescence in metal-8-hydroxyquinoline complexesAnalytica Chimica Acta, 1959
- ber kalte und warme ElektronenentladungenThe European Physical Journal A, 1923