Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities
- 26 November 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (22) , 1686-1689
- https://doi.org/10.1103/physrevlett.43.1686
Abstract
A direct experimental test has revealed that heterojunction energy-band discontinuities are nontransitive. This result was obtained by an x-ray photoemission-spectroscopy investigation of abrupt (110) interfaces in the heterojunction series Ge/CuBr, CuBr/GaAs, and GaAs/Ge. The sum of the valence-band discontinuities for these intefaces is 0.64 ± 0.05 eV, a large deviation from the zero sum expected by transitivity.Keywords
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