Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic Structure

11 July 1977

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 39 (2) , 109-112
https://doi.org/10.1103/physrevlett.39.109

Abstract

Self-consistent calculations allowing electron redistribution in a wide region around a Ge-GaAs(110) interface reveal six types of interface states. The charge densities and local density of states at the interface indicate Ge-Ga bonding states in the gap (but below the valence-band maximum) and a variety of other states at lower energy. Some estimates based on these pseudopotential results give information on band-edge discontinuities and the character of bonds across a nonpolar interface.

Keywords

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