(110) surface states in III-V and II-VI zinc-blende semiconductors
- 15 January 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 13 (2) , 826-834
- https://doi.org/10.1103/physrevb.13.826
Abstract
Using self-consistent pseudopotential calculations the ideal (110) surfaces of III-V and II-VI zinc-blende semiconductors are investigated; GaAs and ZnSe are considered as prototypes. The total valence charge densities and individual surface states are discussed and displayed for both GaAs and ZnSe. A local density of states is also calculated for both types of surfaces. In the case of GaAs, the theoretically calculated dangling-bond states are analyzed using recent experimental results.Keywords
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