Tight binding study of the silicon self-interstitial in tetrahedral site
- 31 August 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 47 (6) , 507-508
- https://doi.org/10.1016/0038-1098(83)91078-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A Thomas-Fermi description of the screening around the vacancy in silicon : Charge state dependenceSolid State Communications, 1980
- Silicon Vacancy: A Possible "Anderson Negative-" SystemPhysical Review Letters, 1979
- The electronic structure of impurities and other point defects in semiconductorsReviews of Modern Physics, 1978
- A new mechanism for interstistitial migrationPhysics Letters A, 1972