Overcoming the pseudomorphic critical thickness limit using compliant substrates
- 27 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (26) , 3640-3642
- https://doi.org/10.1063/1.111229
Abstract
We demonstrated the high‐quality molecular beam epitaxy growth of exceedingly thick In0.14Ga0.86As pseudomorphic layers on thin, free‐standing, compliant GaAs substrates. We first fabricated 800‐Å‐thick compliant platforms before growing a lattice‐mismatched layer on the platform. The layer we grew exceeds its usual critical thickness by about twenty times without strain relaxation. X‐ray analysis confirms a shift in the InGaAs peaks grown on the compliant substrate, indicating an unrelaxed strain of 0.9%. Moreover, atomic force microscope profiles verify that layers grown on compliant substrates are much smoother than layers grown on a plain substrate.Keywords
This publication has 10 references indexed in Scilit:
- Dynamic model for pseudomorphic structures grown on compliant substrates: An approach to extend the critical thicknessApplied Physics Letters, 1993
- New approach to grow pseudomorphic structures over the critical thicknessApplied Physics Letters, 1991
- High-current lattice-strained In0.59Ga0.41As/In0.52Al0.48As modulation-doped field-effect transistors grown by molecular beam epitaxyApplied Physics Letters, 1990
- Low-threshold (≤ 92 A/cm2) 1.6 μm strained-layer single quantum well laser diodes optically pumped by a 0.8 μm laser diodeApplied Physics Letters, 1990
- Reaction of hydrofluoric acid and water with the GaAs(100) surfaceJournal of Vacuum Science & Technology A, 1990
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970