On the Electronic g‐Faetor in n‐Type Silicon Inversion Layers
- 1 May 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 99 (1) , 237-242
- https://doi.org/10.1002/pssb.2220990123
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Evidence for a landé-factorg =2 in n-type inverted silicon MOSFET surfacesPhysica Status Solidi (b), 1979
- Surface quantum oscillations in (110) and (111) n-type silicon inversion layersSolid State Communications, 1975
- Theory of Oscillatory g Factor in an MOS Inversion Layer under Strong Magnetic FieldsJournal of the Physics Society Japan, 1974
- On the ExperimentalgFactor of Conduction Electrons inn-Type Inversion Layer on Silicon (100) SurfaceJapanese Journal of Applied Physics, 1974
- Factor of the Two-Dimensional Interacting Electron GasPhysical Review B, 1969
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966