Anomalous temperature behaviour and band tailing in InGaN/GaN heterostructures grown on sapphire by MOCVD
- 1 January 1998
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 449, 276-277
- https://doi.org/10.1109/cleo.1998.676161
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- “Blue” temperature-induced shift and band-tail emission in InGaN-based light sourcesApplied Physics Letters, 1997
- Comparison of models for calculation of optical gain in gallium nitridePublished by SPIE-Intl Soc Optical Eng ,1997
- Optical and Electrical Characteristics of Single-Quantum-Well InGaN Light-Emitting DiodesMRS Proceedings, 1996