Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (3) , 62-64
- https://doi.org/10.1109/68.87897
Abstract
The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark-effect quantum-well optical modulator, and a metal-semiconductor field-effect transistor (MESFET) to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. To provide an illustration of feasibility, the authors demonstrate signal amplification with a single MESFET.Keywords
This publication has 8 references indexed in Scilit:
- Spatial light modulator and optical dynamic memory using a 6 × 6 array of self-electro-optic-effect devicesOptics Letters, 1988
- Three-terminal noninverting optoelectronic logic deviceOptics Letters, 1987
- Quantum Wells For Optical Information ProcessingOptical Engineering, 1987
- Multiple quantum well reflection modulatorApplied Physics Letters, 1987
- Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channelApplied Physics Letters, 1987
- Wavelength dependence of high-performance AlGaAs/GaAs waveguide phase modulatorsElectronics Letters, 1987
- Integrated quantum well self-electro-optic effect device: 2×2 array of optically bistable switchesApplied Physics Letters, 1986
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985