Integrated quantum well self-electro-optic effect device: 2×2 array of optically bistable switches
- 29 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13) , 821-823
- https://doi.org/10.1063/1.97558
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rulesIEEE Journal of Quantum Electronics, 1986
- Parallel operation and crosstalk measurements in GaAs étalon optical logic devicesApplied Physics Letters, 1986
- Fabrication of arrays of GaAs optical bistable devicesApplied Physics Letters, 1986
- Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguidesApplied Physics Letters, 1985
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Carrier diffusion measurements in InSb by the angular dependence of degenerate four-wave mixingOptics Letters, 1985
- Optical-level shifter and self-linearized optical modulator using a quantum-well self-electro-optic effect deviceOptics Letters, 1984
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Novel hybrid optically bistable switch: The quantum well self-electro-optic effect deviceApplied Physics Letters, 1984