Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

26 November 1984

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 53 (22) , 2173-2176
https://doi.org/10.1103/physrevlett.53.2173

Abstract

We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields > 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.

Keywords

This publication has 10 references indexed in Scilit:

Parabolic quantum wells with the $G a A s - {Al}_{x} {Ga}_{1 - x} As$ system
Physical Review B, 1984
Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
IEEE Journal of Quantum Electronics, 1984
High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure
Applied Physics Letters, 1984
Variational calculations on a quantum well in an electric field
Physical Review B, 1983
Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
Applied Physics Letters, 1982
Exciton binding energy in quantum wells
Physical Review B, 1982
Absorption measurements at high pressure on AlAs-AlxGa1−xAs-GaAs superlattices
Applied Physics Letters, 1982
Observation of the excited level of excitons in GaAs quantum wells
Physical Review B, 1981
Quantum States of Confined Carriers in Very Thin ${Al}_{x} {Ga}_{1 - x} As$ -GaAs- ${Al}_{x} {Ga}_{1 - x} As$ Heterostructures
Physical Review Letters, 1974
Toward a Unified Theory of Urbach's Rule and Exponential Absorption Edges
Physical Review B, 1972