Variational calculations on a quantum well in an electric field
- 15 September 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (6) , 3241-3245
- https://doi.org/10.1103/physrevb.28.3241
Abstract
We present variational calculations of the eigenstates in an isolated-quantum-well structure subjected to an external electric field. At weak fields a quadratic Stark shift is found whose magnitude depends strongly on the finite well depth. In addition, the electric field induces a spatial shift of the particle wave function along or opposite to the field direction, depending on the sign of the particle mass. This field-induced spatial separation of conduction and valence electrons in GaAs quantum wells decreases the overlap between their associated wave functions, leading to a reduction of interband recombination.Keywords
This publication has 12 references indexed in Scilit:
- Far infrared impurity absorption in a quantum wellSolid State Communications, 1983
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982
- Energy spectra of donors inquantum well structures in the effective-mass approximationPhysical Review B, 1982
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Extrinsic photoluminescence from GaAs quantum wellsPhysical Review B, 1982
- Hydrogenic impurity states in a quantum well: A simple modelPhysical Review B, 1981
- Luminescence properties of GaAs-Ga1−x Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxyApplied Physics Letters, 1981
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructuresApplied Physics Letters, 1978
- Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structuresApplied Physics Letters, 1975