Absorption measurements at high pressure on AlAs-AlxGa1−xAs-GaAs superlattices
- 1 May 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (9) , 821-824
- https://doi.org/10.1063/1.93273
Abstract
Absorption data (300 K) are presented on AlxGa1−xAs‐GaAs and AlAs‐GaAs superlattices subjected to hydrostatic pressure (0–10 kbar). These data show that the confined‐particle transitions, which partition and ’’label’’ the Γ energy band high above the band edge (as high as 400 meV or well above the L minima), all move with the same pressure coefficient (11.5 meV/kbar). A weaker effect of the L than the X indirect minima on the absorption is observed.Keywords
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