Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 20 (3) , 265-275
- https://doi.org/10.1109/jqe.1984.1072393
Abstract
We present detailed experimental studies and modeling of the nonlinear absorption and refraction of GaAs/AlGaAs multiple quantum well structures (MQWS) in the small signal regime. Nonlinear absorption and degenerate four-wave mixing in the vicinity of the room temperature exciton resonances are observed and analyzed. Spectra of the real and imaginary parts of the nonlinear cross section as a function of wavelength are obtained, and these are in excellent agreement with experimental data. A simple model for excitonic absorption saturation is proposed; it accounts qualitatively for the very low saturation intensities of room temperature excitons in MQWS.Keywords
This publication has 34 references indexed in Scilit:
- Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAsPhysical Review Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Diffraction efficiency and decay times of free-carrier gratings in siliconJournal of Applied Physics, 1982
- Exact decomposition of a Gaussian-averaged nonlinear functionOptics Letters, 1979
- Electrodynamics of a layered electron gas. II. Periodic arrayAnnals of Physics, 1974
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Dielectric Screening in a Layered Electron GasPhysical Review B, 1971
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Polarizability of a Two-Dimensional Electron GasPhysical Review Letters, 1967