Conduction in the relaxation regime

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Abstract
The conduction behavior of ideal relaxation semiconductors is studied in the general case with trapping included. The investigation of the range of validity of the relaxation concept leads to a more restricted defining condition for the relaxation regime. With increasing deviations from the ideal relaxation regime, the conduction approaches gradually the well-known behavior of conventional (lifetime) semiconductors. In particular, it is shown that the trapping conditions required for "recombinative space-charge injection" are incompatible with thermodynamic steady-state requirements.