Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy
- 1 January 2004
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 22 (1) , 358-363
- https://doi.org/10.1116/1.1627792
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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