Scanning tunneling potentiometry of semiconductor junctions
- 1 July 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (4) , 1677-1681
- https://doi.org/10.1116/1.1491535
Abstract
A method for performing scanning tunneling potentiometry of semiconductor heterojunctions is described. The method yields a direct measure of the electrostatic potential distribution across the interface, with microscopic resolution. The measurement is accomplished by scanning the probe tip at constant sample–tip separation across the junction, and adjusting the sample–tip voltage to maintain a constant tunnel current. An example is given of potentiometry across a GaAs pn junction.Keywords
This publication has 14 references indexed in Scilit:
- Tunneling spectroscopy of the Si(111)2 × 1 surfacePublished by Elsevier ,2002
- Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductorsPhysical Review B, 1994
- Cross-sectional scanning tunneling microscopy of epitaxial GaAs structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Cross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopyApplied Physics Letters, 1992
- Electrical profiling of Si(001) p-n junctions by scanning tunneling microscopyApplied Physics Letters, 1992
- Current imaging of cleaved silicon pn junctions with an ultrahigh vacuum scanning tunneling microscopeApplied Physics Letters, 1991
- Observation of p n junctions on implanted silicon using a scanning tunneling microscopeApplied Physics Letters, 1988
- Direct measurement of potential steps at grain boundaries in the presence of current flowPhysical Review Letters, 1988
- Scanning tunneling microscopy and potentiometry on a semiconductor heterojunctionApplied Physics Letters, 1987
- Scanning tunneling potentiometryApplied Physics Letters, 1986