Electrical profiling of Si(001) p-n junctions by scanning tunneling microscopy
- 13 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (2) , 201-203
- https://doi.org/10.1063/1.108218
Abstract
Potential distributions across Si(001)p‐n junctions have been studied using cross‐sectional scanning tunneling microscopy, spectroscopy, and potentiometry. A clear transition between p‐ and n‐type material can be seen across each junction, and variations in the energy of the conduction‐band edge can be detected with a spatial resolution of better than 100 Å. Current‐voltage characteristics have been measured in both unbiased and electrically biased structures, and measurements under both conditions are consistent with calculated potential distributions.Keywords
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