Scanning tunneling microscopy and potentiometry on a semiconductor heterojunction
- 11 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (19) , 1352-1354
- https://doi.org/10.1063/1.97853
Abstract
The potential distribution across the cleaved end face of a forward-biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry. Space-charge regions next to the heterojunction interface as well as the electron-hole recombination region within the active layer are outlined with nanometer resolution. The carrier injection zone in the active layer is observed as a function of junction voltage.Keywords
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