High-speed NMOS operational amplifier fabricated using VLSI technology
- 18 February 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (4) , 159-161
- https://doi.org/10.1049/el:19820110
Abstract
A small wideband NMOS operational amplifier for high-speed LSIs was fabricated using VLSI technology with a minimum channel width of 3 μm and minimum gate length of 4.5 μm. Results such as 0.062 mm2 silicon area, 66 dB DC open-loop gain, 9.6 MHz gain-bandwidth product, +13.8/−19.3 V/μs slew rates and about 200 ns settling time were successfully obtained. The technique to improve transient response is also discussed.Keywords
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