1.2 V operation 1.1 W heterojunction FET for portable radio applications

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 185-188
https://doi.org/10.1109/iedm.1995.497210

Abstract

This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.

Keywords

HETEROJUNCTIONS
FETS
POWER GENERATION
LOW VOLTAGE
THERMAL RESISTANCE
INTRUSION DETECTION
BREAKDOWN VOLTAGE
LABORATORIES
NATIONAL ELECTRIC CODE
ART

This publication has 1 reference indexed in Scilit:

Highly efficient double-doped heterojunction FET's for battery-operated portable power applications
IEEE Electron Device Letters, 1994