Highly efficient double-doped heterojunction FET's for battery-operated portable power applications
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (7) , 248-250
- https://doi.org/10.1109/55.294085
Abstract
Microwave power performance of double-doped AlGaAs-InGaAs-AlGaAs heterojunction field-effect transistors (HJFET's) operated at a drain bias of 3 V is described. The fabricated 1.0 μm gate-length HJFET exhibited a maximum drain current of 500 mA/mm, a transconductance of 300 mS/mm, and a gate-to-drain breakdown voltage of 10 V. Power performance for a 14 mm gate periphery device demonstrated a maximum output power of 1.7 W with a 66% power-added efficiency (PAE) at 900 MHz. When the device was tuned for a maximum PAE, it delivered a 71% PAE with an output power of 1.2 W. The results indicate that the developed HJFET has great potential for 3 V battery-operated portable power applications.Keywords
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