Orientation of oxygen precipitates in silicon

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Abstract
Czochralskii-grown dislocation-free silicon is used almost exclusively in the semiconductor industry for the manufacture of VLSI devices. Such material contains small quantities ( approximately 10 p.p.m.) of dissolved oxygen, which can have a crucial effect on the devices produced. During heat treatments the oxygen precipitates out as silica particles. This communication addresses the orientation of these cuboidal precipitates and establishes that they lie only on the (100) planes, with edges along the (110) directions.