Anisotropic small-angle neutron scattering from oxide precipitates in silicon single crystals
- 1 May 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (5) , 340-344
- https://doi.org/10.1088/0268-1242/4/5/002
Abstract
Anisotropic small-angle neutron scattering has been observed from Czochralski-grown silicon single crystals annealed for different times at 750 degrees C. This scattering has been attributed to oxide platelet precipitates lying on the (100) planes. The precipitate size, number density and oxygen concentration in the matrix are obtained from the analysis of this scattering. The oxygen diffusion coefficient has been calculated from the increase in the size of the precipitates with anneal time and it is found to be in agreement with the value obtained from mass transport experiments. The loss of solute oxygen from the matrix follows the equation derived by Ham (1958).Keywords
This publication has 10 references indexed in Scilit:
- A study of θ' precipitates in an Al–1·56 at.% Cu single crystal using electrical resistivity, small-angle neutron scattering and hardness measurementsPhilosophical Magazine A, 1988
- Is enhanced interstitial oxygen diffusion necessary to explain the kinetics of precipitation in silicon at temperatures below 650 degrees C?Semiconductor Science and Technology, 1987
- Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon?Journal of Applied Physics, 1985
- An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free siliconJournal of Physics C: Solid State Physics, 1984
- Diffusion limited precipitation of oxygen in dislocation-free siliconApplied Physics Letters, 1983
- Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle sizePhysica B+C, 1983
- Nucleation temperature of large oxide precipitates in as-grown Czochralski silicon crystalJournal of Crystal Growth, 1982
- Diffusion-limited growth of oxide precipitates in czochralski silisonJournal of Crystal Growth, 1980
- Effects of ambients on oxygen precipitation in siliconApplied Physics Letters, 1980
- Theory of diffusion-limited precipitationJournal of Physics and Chemistry of Solids, 1958