The use of a variable breakdown device as a solid state inductance and for other electronic functions
- 31 August 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (8) , 563-574
- https://doi.org/10.1016/0038-1101(64)90100-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Common emitter breakdownIEEE Transactions on Electron Devices, 1963
- A High Q Tuned Circuit using a Solid State Inductance†Journal of Electronics and Control, 1961
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- A High Frequency Germanium Drift Transistor by Post Alloy DiffusionJournal of Electronics and Control, 1958
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954