A High Frequency Germanium Drift Transistor by Post Alloy Diffusion

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Abstract
A new technique of Solid state diffusion, called here ‘ post alloy diffusion ’, is described with particular reference to the construction of a high frequency germanium drift transistor. In this post alloy diffusion technique two or more impurities of different conductivity type and alloyed into n-typo germanium to produce an alloyed pn junction. This structure is then modified by diffusion to produce a diffused pn junction, the graded n-typo region of which is suitable to act as the base and the p-type region the emitter of a drift transistor. The construction of a transistor made by this method is described and some of the design variables are discussed. Transistors with alpha cut-off frequency in excess of 200 Me/s, collector capacitance of 1·5 pF-and base resistance of 50 ohms, have been made

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