A High-Frequency Diffused Base Germanium Transistor
- 1 January 1956
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 35 (1) , 23-34
- https://doi.org/10.1002/j.1538-7305.1956.tb02372.x
Abstract
Techniques of impurity diffusion and alloying have been developed which make possible the construction of p-n-p junction transistors utilizing a diffused surface layer as a base region. An important feature is the high degree of dimensional control o...Keywords
This publication has 6 references indexed in Scilit:
- Thermal Effects on Lifetime of Minority Carriers in GermaniumPhysical Review B, 1954
- Extension of the Theory of the Junction TransistorPhysical Review B, 1954
- On the Variation of Junction-Transistor Current-Amplification Factor with Emitter CurrentProceedings of the IRE, 1954
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954
- Impurity Diffusion and Space Charge Layers in "Fused-Impurity"JunctionsPhysical Review B, 1953
- Diffusion of Donor and Acceptor Elements into GermaniumPhysical Review B, 1952