New MOS-Type Glucose Sensor Using Sputtered LaF3 Film
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5A) , L871
- https://doi.org/10.1143/jjap.30.l871
Abstract
A MOS-type micro glucose sensor using a sputtered LaF3 (solid electrolyte) film was newly developed. The sensor, having a structure of GOD (glucose oxidase) immobilized film/Pt/LaF3/SiO2/Si/Al multiple layers, needs no external reference electrode. A stable response was obtained in the glucose concentration range from 2×10-4 to 2×10-2 M in a phosphate buffer solution of (pH 6.9), with a 90% response time of ca. 1 min. This MOS-type sensor was found to also respond to H2O2 in the buffer.Keywords
This publication has 10 references indexed in Scilit:
- MOS-Type Micro-Oxygen Sensor Using LaF3 Workable at Room TemperatureJapanese Journal of Applied Physics, 1990
- New type biosensor using solid electrolyteSolid State Ionics, 1990
- Solid-State Glucose Sensor Using LaF3-Based TransducerJapanese Journal of Applied Physics, 1989
- Solid-state oxygen sensor using sputtered LaF3 filmSensors and Actuators, 1989
- LaF3 sputtered film sensor for detecting oxygen at room temperatureApplied Surface Science, 1988
- Micro-fabrication of BiosensorsPublished by Elsevier ,1988
- Potentiometric solid-state oxygen sensor using lanthanum fluoride operative at room temperatureSensors and Actuators, 1987
- Determination of Volatile N-Nitrosamines in Rubber Nipples by Gas Chromatography Using Thermal Energy AnalyzerAnalytical Sciences, 1986
- Integrated enzyme fets for simultaneous detections of urea and glucoseSensors and Actuators, 1985
- Field effect transistor sensitive to penicillinAnalytical Chemistry, 1980