New radiative deep states in epitaxial Ga1−xAlxAs
- 15 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (8) , 664-666
- https://doi.org/10.1063/1.91617
Abstract
Photoluminescence measurements performed at 6–7 K on intentionally undoped n‐type liquid‐phase epitaxy Ga1−xAlxAs (0.19⩽x⩽0.78) reveal transitions involving energies significantly lower than the band gap for crystals with x⩾0.47. Analysis of the luminescence data as a function of excitation intensity shows the presence of deep‐level acceptors which participate in radiative transitions, and binding energies of 0.52, 0.48, and 0.56 eV are obtained for x=0.47, 0.50, and 0.61, respectively. These values are strikingly similar to the activation energies of hole traps which are present in crystals with x=0.50, 0.61, and 0.78 and strongly suggests that the radiative acceptors and the hole traps are either identical or related states. Electron trap levels which are also present in the same crystal are found to be nonradiative.Keywords
This publication has 14 references indexed in Scilit:
- Deep center luminescence (1.02 eV) in GaAs/(GaAl)As epitaxial layers and double-heterostructure lasersApplied Physics Letters, 1978
- Velocity saturation and the conduction-band structure of Ga1−xAlxAs under pressureApplied Physics Letters, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Studies of photoluminescence in GaAs1−xPx mixed crystalsPhysica Status Solidi (b), 1971
- The fundamental absorption edge of AlAs and AlPSolid State Communications, 1970
- Energy-Band Structure of Aluminum ArsenidePhysical Review B, 1969
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Electrical properties of n-type aluminium arsenideSolid-State Electronics, 1965
- Conduction Band Minima in AlAs and AlSbPhysical Review Letters, 1963