Velocity saturation and the conduction-band structure of Ga1−xAlxAs under pressure
- 15 December 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (12) , 842-844
- https://doi.org/10.1063/1.89570
Abstract
The high‐field current‐field characteristics of Ga1−xAlxAs transferred‐electron‐effect devices for 0.2<xL and X conduction‐band minima are derived for 0<xL and Γ‐X energy separations for GaAs are determined to be 0.29±0.01 and 0.485 eV, respectively. The Γ‐X and Γ‐L crossover points are x=0.43 and 0.45±0.02, respectively. The alloy composition for velocity saturation is x=0.33, and the corresponding threshold field, as determined from a probe measurement, is 6.5±0.5 kV/cm.Keywords
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