Layer growth in silicon epitaxy
- 1 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 297-301
- https://doi.org/10.1016/0022-0248(72)90173-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Screw-Type Nucleus Centers in Silicon Epitaxial GrowthJournal of Applied Physics, 1971
- Observation of Nucleus Centers on Solution-Grown Germanium Epitaxial LayersJournal of Applied Physics, 1971
- Anisotropy of Macrostep Motion and Pattern Edge-Displacements during Growth of Epitaxial Silicon on Silicon Near {100}Journal of the Electrochemical Society, 1970
- Surface Orientation Effect of the Shadow of the Stacking FaultJournal of Applied Physics, 1969
- Geometrical Stability of Shallow Surface Depressions During Growth of (111) and (100) Epitaxial SiliconJournal of the Electrochemical Society, 1968
- Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon SubstratesJournal of Applied Physics, 1964