Silicide doping technology in formation of TiSi2 /n+ p shallow junction by salicide process
- 1 February 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (3) , 1039-1043
- https://doi.org/10.1063/1.343037
Abstract
The fabrication of a shallow n+ p junction by diffusing arsenic atoms from the As+ ‐implanted TiSi2 into the underlying silicon has been developed. The amendment of the radiation damage and the activation of impurities can be fulfilled in one annealing process in conjunction with the dopant drive‐in. The junction depth below the TiSi2 /Si interface is about 0.11 μm, and is insensitive to the values of implanted ion energy and the annealing condition as long as the dopants remain in the TiSi2 film. The dopant concentration near the surface in the n+ region can be added up to 2×1019 /cm3 for an implanted dose of 5×1015 /cm2 .This publication has 10 references indexed in Scilit:
- Self-aligned silicides or metals for very large scale integrated circuit applicationsJournal of Vacuum Science & Technology B, 1986
- Nonuniversality of the Mooij Correlation—the Temperature Coefficient of Electrical Resistivity of Disordered MetalsPhysical Review Letters, 1986
- NMOS Ring oscillators with cobalt-silicided P-diffused shallow junctions formed during the "Poly-plug" contact doping cycleIEEE Transactions on Electron Devices, 1986
- Diffusion of ion-implanted As in TiSi2Journal of Applied Physics, 1986
- Development of the self-aligned titanium silicide process for VLSI applicationsIEEE Transactions on Electron Devices, 1985
- Development of the Self-Aligned Titanium Silicide Process for VLSI ApplicationsIEEE Journal of Solid-State Circuits, 1985
- Arsenic out-diffusion during TiSi2 formationApplied Physics Letters, 1984
- Arsenic distribution in bilayers of TiSi2 on polycrystalline silicon during heat treatmentThin Solid Films, 1983
- Summary Abstract: Redistribution of dopants in TiSi2-polycrystalline bilayers during heat treatmentJournal of Vacuum Science & Technology A, 1983
- Low-temperature redistribution of As in Si during Pd2Si formationApplied Physics Letters, 1981