Arsenic distribution in bilayers of TiSi2 on polycrystalline silicon during heat treatment
- 1 December 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 110 (4) , 281-289
- https://doi.org/10.1016/0040-6090(83)90509-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Properties of tungsten silicide film on polycrystalline siliconJournal of Applied Physics, 1981
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- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- Physical and X‐Ray Study of the Disilicides of Titanium, Zirconium, and HafniumJournal of the American Ceramic Society, 1956