Properties of tungsten silicide film on polycrystalline silicon
- 1 August 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8) , 5350-5355
- https://doi.org/10.1063/1.329393
Abstract
Tungsten silicide on polycrystalline Si becomes increasingly important as interconnections and gate electrodes for metal-oxide-semiconductor field-effect transistor(MOSFET) integrated circuits. Annealing behaviors of coevaporatd tungsten silicide on P-doped poly-Si are studied by x-ray diffraction, He+-backscattering, transmission electron microscopy (TEM), and secondary ion mass spectroscopy (SIMS). High-temperature annealing of silicides results in crystallization and homogenization of tungsten silicide as well as phosphorus out-diffusion from the poly-Si. Their effect on device fabrication is also discussed.This publication has 10 references indexed in Scilit:
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