Dopant diffusion in tungsten silicide
- 1 April 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3059-3062
- https://doi.org/10.1063/1.331050
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Composite silicide gate electrodes—Interconnections for VLSI device technologiesIEEE Transactions on Electron Devices, 1980
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspectiveIEEE Transactions on Electron Devices, 1979
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978