Ballistic transport and gate control mechanism in deeply etched electron-waveguide based devices
- 1 July 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (7-8) , 1115-1119
- https://doi.org/10.1016/s0038-1101(97)00312-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Demonstration of quantized conductance in deeply reactive ion etched In0.53Ga0.47As/InP electron waveguides with in-plane gatesApplied Physics Letters, 1997
- Intrinsic and extrinsic capacitances of in-plane-gated transistorsJournal of Applied Physics, 1996
- Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical ProcessJapanese Journal of Applied Physics, 1995
- Quantized conductance and its effects on non-linear current-voltage characteristics at 80 K in mesa-etched InAs/AlGaSb quantum wires with split-gateSolid-State Electronics, 1994
- Quantum interference devices and field-effect transistors: A switch energy comparisonJournal of Applied Physics, 1993
- Contact capacitance in the two-dimensional electron gasJournal of Physics: Condensed Matter, 1992
- Theory of junction between two-dimensional electron gas and p-type semiconductorIEEE Transactions on Electron Devices, 1992
- Analysis of an electron-wave Y-branch switchApplied Physics Letters, 1992
- In-plane-gated quantum wire transistor fabricated with directly written focused ion beamsApplied Physics Letters, 1990