Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
- 1 May 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (5B) , L635-638
- https://doi.org/10.1143/jjap.34.l635
Abstract
A novel Schottky in-plane gate (IPG) quantum wire transistor has been successfully fabricated for the first time on a GaAs/AlGaAs quantum-well (QW) wafer, using a low-damage in situ electrochemical process. In comparison with previous IPG transistors of insulated-gate type, the present Schottky IPG device exhibited much better gate control of drain currents. In spite of large device dimensions of several hundred nanometers, sharp quantized conductance steps in units of 2e2/hwere observed up to 40 K as a result of the inherent strong electron confinement capability of the present IPG structure.Keywords
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