Quantized Conductance in InGaAs Point Contacts at High Temperatures
- 1 June 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (6A) , L800
- https://doi.org/10.1143/jjap.33.l800
Abstract
We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/InAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.Keywords
This publication has 15 references indexed in Scilit:
- Quantized conductance of ballistic constrictions in InAs/AlSb quantum wellsApplied Physics Letters, 1993
- Low-temperature transport characteristics of AlGaAs-GaAs in-plane-gated wiresJournal of Applied Physics, 1992
- Quantum ballistic and adiabatic electron transport studied with quantum point contactsPhysical Review B, 1991
- Effect of impurities on the quantized conductance of narrow channelsPhysical Review B, 1989
- Quantum conduction in narrow constrictionsPhysical Review B, 1989
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional ChannelJapanese Journal of Applied Physics, 1989
- Theory of Quantum Conduction through a ConstrictionPhysical Review Letters, 1989
- Theory of the conductance of ballistic quantum channelsSolid State Communications, 1988
- One-dimensional transport and the quantisation of the ballistic resistanceJournal of Physics C: Solid State Physics, 1988
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988