Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse–Assisted Electrochemical Process

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Abstract
An oxide-free Pt/GaAs Schottky barrier was fabricated by a novel i n s i t u photopulse-assisted electrochemical process. Nearly ideal thermionic emission characteristics of a high barrier height φ Bn of 1.07 eV and an ideality factor of n=1.05, were observed over a range of 7 orders of magnitude of electric current. The results of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and deep level transient spectroscopy (DLTS) measurements indicated that the novel electrochemical process produces a smooth and oxide-free interface and prevents formation of process-induced damage. It produces firm Fermi level pinning which was previously possible only by ultrahigh-vacuum (UHV) processes.