Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

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Abstract
Various preparation methods used for the fabrication of submillimeter-wave Pt/GaAs Schottky diodes are compared with respect to deep levels present in the diode surface region. In the samples prepared by the standard electron-beam evaporation process, three process-induced deep levels were detected with the concentrations in the range of 1013-1014 cm-3. On the other hand, these levels were very much reduced in the diodes produced by a new in-situ electrochemical technique. This appears to be related to the reported very low noise property of the latter diodes.