Simultaneous Observation of Sub- and Above Threshold Electron Irradiation Induced Defects in GaAs
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1R)
- https://doi.org/10.1143/jjap.30.80
Abstract
Sub- and above threshold defects were introduced in n-type OMVPE grown GaAs during 3 keV and 3 MeV electron irradiation, respectively. The electrical properties of these defects were determined by DLTS measurements in samples that contained subthreshold defects only, above threshold defects only, as well as samples that contained both types of defects. A careful examination of the low temperature DLTS peaks revealed that although the sub- and above threshold defects have similar properties, they are nevertheless distinguishable from each other and are therefore not the same as has previously been speculated.Keywords
This publication has 6 references indexed in Scilit:
- Defect Formation in GaAs by Subthreshold Energy (0.2–3 keV) Electron IrradiationJapanese Journal of Applied Physics, 1989
- Deep-level transient spectroscopy detection of defects created in epitaxial GaAs after electron-beam metallizationJournal of Applied Physics, 1988
- An annealing study of electron irradiation-induced defects in GaAsJournal of Applied Physics, 1980
- Energy dependence of deep level introduction in electron irradiated GaAsJournal of Applied Physics, 1980
- Secondary emission and photoemission from negative electron affinity GaP : CsJournal of Applied Physics, 1974
- Penetration and energy-loss theory of electrons in solid targetsJournal of Physics D: Applied Physics, 1972