Dielectric property of (TiO2)x−(Ta2O5)1−x thin films

$({\mathrm{TiO}}_2{)}_x\mathrm{-(}{\mathrm{Ta}}_{\mathrm{2}}{\mathrm{O}}_{\mathrm{5}}{)}_{\text{1−x}}$ thin films were prepared with radio-frequency magnetron sputtering deposition in this study. The dielectric constant measured from these films appears to critically depend on the amount of ${\mathrm{TiO}}_2$ incorporated into the film and post-anneal condition. The composition dependence was found similar to that reported on $({\mathrm{TiO}}_2{)}_x\mathrm{-(}{\mathrm{Ta}}_{\mathrm{2}}{\mathrm{O}}_{\mathrm{5}}{)}_{\text{1−x}}$ bulk. The highest value of dielectric constant is about 55 for a ${\mathrm{TiO}}_2$ content of 8% and annealing at 800 °C. Compared to pure ${\mathrm{Ta}}_{\mathrm{2}}{\mathrm{O}}_{\mathrm{5}}$ thin films, significant enhancement in dielectric constant is obtained by adding small quantity of ${\mathrm{TiO}}_2.$