Nanowire Single-Electron Memory
- 24 February 2005
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 5 (4) , 635-638
- https://doi.org/10.1021/nl050006s
Abstract
We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.Keywords
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