Resonant tunneling spectroscopy in Schottky diodes
- 1 July 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7) , 3980-3983
- https://doi.org/10.1063/1.328182
Abstract
A new method to detect deep centers close to the interface in metal‐semiconductor contacts is reported. The presence of humps in the logIF‐ VF characteristics attributed to resonant tunneling contributions to the total forward current is investigated via the slope changes in the logIF‐ VF plots. Although the relation between the voltage VFm at which the minimum of d2 logIF/ dV2F occurs, and the energy position of the levels causing the resonant tunneling current is not easy to calculate, this new method represents a powerful means to detect traps lying near the interface.This publication has 7 references indexed in Scilit:
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