Electrical and photo-luminescence properties of ZnSe epitaxial layers grown on GaAs (100) by atmospheric pressure MOVPE: The role of substrate temperature
- 1 July 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (4) , 251-255
- https://doi.org/10.1007/bf02659639
Abstract
No abstract availableKeywords
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