On the growth of ZnSe on (100) GaAs by atmospheric pressure movpe
- 31 August 1985
- journal article
- Published by Elsevier in Materials Letters
- Vol. 3 (11) , 453-456
- https://doi.org/10.1016/0167-577x(85)90139-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Characterization of ZnSe grown by molecular-beam epitaxyJournal of Crystal Growth, 1985
- Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPEJournal of Crystal Growth, 1985
- The growth and characterization of low resistivity n-type ZnSy Sel-y on (100) GaAsJournal of Electronic Materials, 1984
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPEJapanese Journal of Applied Physics, 1984
- High resolution transmission electron microscopy (HRTEM) of epitaxially grown ZnSe and ZnSe/GaAs interfacesJournal of Materials Science Letters, 1984
- Vapor growth and properties of thin film ZnSxSe1−xThin Solid Films, 1982
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971