Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L360
- https://doi.org/10.1143/jjap.23.l360
Abstract
Undoped ZnSe epitaxial layers have been grown at a temperature as low as 250°C onto (100)GaAs substrates by a low-temperature and low-pressure organometallic vapor-phase epitaxial (OMVPE) technique using dimethylzinc (DMZ) and H2Se as source materials. The epilayers have exhibited strong blue emission and low resistive n-type conductivity. Typical values of the electron concentration n, the resistivity p, and the electron Hall mobility µ are n=8.2×1016 cm-3, p=0.31 Ω·cm, and µ=244 cm2/V·s, respectively.Keywords
This publication has 17 references indexed in Scilit:
- Dependence of the Characteristics of ZnSe MBE Grown on GaAs and GaP on Thermal Treatment in a VacuumJournal of the Electrochemical Society, 1983
- Growth of ZnS by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1983
- Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature EffectJapanese Journal of Applied Physics, 1983
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- High-efficiency blue luminescence from MOCVD-grown ZnSe at room temperatureElectronics Letters, 1982
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1981
- Molecular beam epitaxy of zinc chalcogenidesJournal of Crystal Growth, 1981
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978